Semiconductor laser device and manufacturing process
文献类型：专利
| 作者 | TADA KUNIO; NAKANO YOSHIAKI; RA TAKESHI; INOUE TAKESHI |
| 发表日期 | 1991-03-04 |
| 专利号 | JP1991049284A |
| 著作权人 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacturing process |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser capable of generating induced emission light by growing a thin buffer layer on the surface of a semiconductor layer which has engraved an uneven shape in such manner that said uneven shape may be exaggerated and growing an active layer on the surface in such a manner that the recessed section may be buried. CONSTITUTION:A diffraction grating which carries out optical distribution feedback on an active layer is formed in uneven shape in cyclic mode on one side of the active layer 7. The layer 7 is designed to change its thickness distribution in conformity with the uneven shape cyclic mode and it is provided with a semiconductor thin buffer layer 6 which faces the uneven shape formed on the layer 7. Furthermore, the layer 7 is provided with a semiconductor layer 4 which is engraved in uneven shape, facing the other side of the layer 7. The layer 6 is designed to make an epitaxial growth so as to transmit the uneven shape formed on the layer 4 which the other side of the layer 6 faces, to the uneven shape formed on the layer 7. The layer 6 includes a buffer layer 6a which emphatically reforms the recessed and projected parts in the uneven shape engraved on the layer 4. This construction prevents the generation of defects on the semiconductor structure even if the diffraction grating is formed on the active layer, which makes it possible to generate induced emission light more efficiently. |
| 公开日期 | 1991-03-04 |
| 申请日期 | 1989-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65776]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | TADA KUNIO,NAKANO YOSHIAKI,RA TAKESHI,et al. Semiconductor laser device and manufacturing process. JP1991049284A. 1991-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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