Optoelectronic integrated circuit device and manufacture thereof
文献类型：专利
| 作者 | TSUJII HIRAAKI; ONAKA SEIJI; SHIBATA ATSUSHI |
| 发表日期 | 1988-11-09 |
| 专利号 | JP1988271989A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optoelectronic integrated circuit device and manufacture thereof |
| 英文摘要 | PURPOSE:To lessen the amount of scatter of the current amplification factor and reduce the stray capacity at the circumference of a collector and then, makes it pos sible to operate at great speed by forming a base layer of a transistor before a protrud ing form of a laser part is formed so that both electrodes of the laser part may be taken out from the surface of a substrate by using a semi-insulation substrate. CONSTITUTION:An n-type layer 103 makes possible the epitaxial growth on a semi- insulation substrate 101 and the n-type layer 103 is used as an n-type clad layer of a laser device 1 and also is used as a collector layer of a transistor 2. And an active layer 104 of the laser device and a p-type optical waveguide layer 105 are laminated and among them, the active layer 104 is used as a part of the collector layer and the p-type waveguide layer 105 is used as a base layer in the transistor 2. Then, after forming a p-type clad layer 106 of the laser device, it is selectively etched into the form of a stripe and the laser part 1 is made up and after that, this device allows an emitter layer 111 comprising an extensive transistor to grow and a stripe-like protrusion of the laser device is buried in its layer. As the base layer of this transistor is formed at the first time, it may have uniform characteristics. |
| 公开日期 | 1988-11-09 |
| 申请日期 | 1987-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65780]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSUJII HIRAAKI,ONAKA SEIJI,SHIBATA ATSUSHI. Optoelectronic integrated circuit device and manufacture thereof. JP1988271989A. 1988-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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