Semiconductor laser element and semiconductor laser element manufacturing method
文献类型：专利
| 作者 | ITOH, YOSHIYUKI; TERADA, TOSHIYUKI; YOSHITAKE, SHUNJI |
| 发表日期 | 2005-03-17 |
| 专利号 | US20050058170A1 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and semiconductor laser element manufacturing method |
| 英文摘要 | Disclosed is a semiconductor laser element including: a double heterojunction structure having a p-type clad layer; a second p-type clad layer formed on the double heterojunction structure, having a first dopant and a ridge shape; a p-type contact layer formed on the second p-type clad layer, having a second dopant whose diffusion velocity is slower than that of the first dopant; a dielectric film covering a side surface of the second p-type clad layer and the p-type contact layer, and a surface on which the second p-type clad layer is not formed on the double heterojunction structure; and a p-side electrode formed on the p-type contact layer. Meanwhile, disclosed is a semiconductor laser element including a similar double heterojunction structure, a second p-type clad layer, a p-type contact layer, and a p-side electrode, with end faces of cleavages of the double heterojunction structure thereof being an unmarshalled layer structure. |
| 公开日期 | 2005-03-17 |
| 申请日期 | 2004-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65782]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | ITOH, YOSHIYUKI,TERADA, TOSHIYUKI,YOSHITAKE, SHUNJI. Semiconductor laser element and semiconductor laser element manufacturing method. US20050058170A1. 2005-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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