Heat sink for array semiconductor laser
文献类型：专利
| 作者 | OTA YOSHINORI |
| 发表日期 | 1988-04-04 |
| 专利号 | JP1988073584A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Heat sink for array semiconductor laser |
| 英文摘要 | PURPOSE:To conduct isolation in response to a layer element, and to enable high density packaging by forming the width of a cross section in size wider at the position of substrate depth than the position of a fusing surface in the sectional form of a trench along the direction of resonance of a semiconductor laser formed onto an silicon substrate surface to which the array semiconductor laser is fused. CONSTITUTION:An Si crystal layer 2 containing B can be shaped as a crystal layer through an epitaxial growth method. The layer 2 containing B is etched to a trench shape, using KOH as an etchant by employing a mask using a photo-resist. When the mixed liquid of ethylene diamine and pyrocatechol is heated at the boiling point of 116 deg.C and the Si substrate 1 is dipped into the mixed liquid, Si 1 is etched to a cellar shape that the layer 2 containing B is formed as eaves because the layer 2 has an extremely slow etching rate, and a trench 6 having narrow width in a fusing section with a laser and broad width in a deep section is shaped. When Sn 4 is evaporated, Sn does not adhere on the side walls of each trench 6, and only collects as Sn 5 on the bottoms of the trenches 6. Accordingly, electrodes 3a, 3b, 3c are not conducted, thus independently driving respective laser element. |
| 公开日期 | 1988-04-04 |
| 申请日期 | 1986-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65793]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | OTA YOSHINORI. Heat sink for array semiconductor laser. JP1988073584A. 1988-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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