Selectively growing method for crystal
文献类型：专利
| 作者 | TOMIYAMA CHISATO; KURAMATA AKITO |
| 发表日期 | 1988-03-14 |
| 专利号 | JP1988058923A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Selectively growing method for crystal |
| 英文摘要 | PURPOSE:To suppress deposition on a mask to easily remove the mask and to selectively grow a III-V compound single crystal layer on an InP single crystal by forming the mask of Six Ny and using a reduced pressure organic metal thermal decomposing vapor growing method (MO-CVD method) under O.5 atm or less. CONSTITUTION:An SixNy film is deposited on a contact layer 5, and patterned to form a stripe-like mask 1 Then, regions not covered with the mask 11 are etched to a depth which arrives at an n-type InP clad layer 2 with bromine (Br)-methanol solution. Then, a p-type InP layer 6 and an n-type InP layer 7 are epitaxially grown by an MO-CVD method under 0.5 atm or less. Accordingly, InP polycrystals are scattered on the mask 11 to be slightly deposited during an epitaxial growth process filling the etched region, but the mask 11 and the deposit can be easily removed by a treatment with HF. Thus, a III-V compound single crystal layer matched to the InP single crystal can be easily selectively grown by the MO-CVD method. |
| 公开日期 | 1988-03-14 |
| 申请日期 | 1986-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65796]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TOMIYAMA CHISATO,KURAMATA AKITO. Selectively growing method for crystal. JP1988058923A. 1988-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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