Forming method of micro coat
文献类型：专利
| 作者 | SAITO HIDEHO |
| 发表日期 | 1992-08-06 |
| 专利号 | JP1992216690A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Forming method of micro coat |
| 英文摘要 | PURPOSE:To prevent the increase of a diode leak current, in the case of forming the high reflection factor laser end surface and the high reflection factor reflecting mirror of a reflection type surface light emission semiconductor laser, by coating a substrate having deep trenches or holes with resist, and repeating exposure-development process two times or more.. CONSTITUTION:Substrates 1-3 having deep trenches or holes are coated with resist 7, and exposure.development process are repeated two or more times, thereby forming trenches or holes 17 of the resist 7 which reach bottoms of the above trenches or holes. By using an RF sputtering method or an evaporation method or a CVD method, a metal film 10 or an insulating film 8 is formed on the bottom or the side surface of the trench or the hole 17. The resist 7 is eliminated by a lift-off method, and the metal film 10 or the insulating film 8 is formed in a small area region containing the whole part or a part of the bottom or the side surface of the trench or the hole 17. |
| 公开日期 | 1992-08-06 |
| 申请日期 | 1990-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65801]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SAITO HIDEHO. Forming method of micro coat. JP1992216690A. 1992-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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