Manufacture of surface-emission semiconductor laser
文献类型：专利
| 作者 | IGA KENICHI; ISHIKAWA TORU; IBARAKI AKIRA; FURUSAWA KOTARO |
| 发表日期 | 1991-12-05 |
| 专利号 | JP1991274783A |
| 著作权人 | RES DEV CORP OF JAPAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of surface-emission semiconductor laser |
| 英文摘要 | PURPOSE:To provide a uniform active GaAlAs layer with good controllability by melting back an active GaAlAs using an unsaturated melt that contains Ga, A1, and As. CONSTITUTION:A resist layer is patterned on a mask 6, and an active layer 3 is chemically etched with the resist layer used as a mask. The resist layer is removed to form a mesa 11 that is to be buried. The exposed active layer 3 is melt back by selective liquid-phase epitaxy using an unsaturated three- element melt (GaAlAs melt) containing Ga, Al, and As. The GaAlAs melt has an aluminum content such that, when it is saturated, the proportion of AlAs becomes 0.35 to 0.45. |
| 公开日期 | 1991-12-05 |
| 申请日期 | 1990-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65817]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RES DEV CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | IGA KENICHI,ISHIKAWA TORU,IBARAKI AKIRA,et al. Manufacture of surface-emission semiconductor laser. JP1991274783A. 1991-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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