Semiconductor photoelectronic device
文献类型：专利
| 作者 | KOMATSU HIROSHI; OSHIMA HIROYUKI; IWANO HIDEAKI; TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1986-05-26 |
| 专利号 | JP1986108187A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor photoelectronic device |
| 英文摘要 | PURPOSE:To integrate a light-emitting element, a light-receiving element and an electronic element on a single substrate and to obtain an photoelectronic device with high utility, by selectively utilizing the upper or lower face of the Si single-crystal substrate and by superposing thereon an amorphous insulation film, a thin film of a compound semiconductor and multilayer thin film of said compound semiconductor. CONSTITUTION:An SiO2 film 2 on an N type Si substrate 1 is provided, on the surface thereof, with rectangular stripe grooves with a depth of 10-10Angstrom and a width of 0.1-10mum by means of etching. Amorphous or polycrystalline N type GaAs 3 is then deposited thereon by the vapor growth, and is heated so that it is rearranged along the grooves and that single crystal is caused to grow. Subsequently, an N type AlGaAs layer 4, an AlGaAS active layer 5, a P type AlGaAs layer 6 and a P type GaAs layer 8 are epitaxially deposited to form a laser diode. An N layer 10 is provided in the P layer 9 of the substrate 1 to form an NPN transistor. These are provided with protective films 11 and 12, electrodes 8, 13 and 14 and wiring 15, respectively. According to this construction, the intensity of laser beams can be controlled with the base current in the transistor. Further, it is also possible to integrate a laser element, a light-receiving element and a driving element on one face while integrating a driving element and a signal processing arithmatical element on the opposite face. |
| 公开日期 | 1986-05-26 |
| 申请日期 | 1984-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65820]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | KOMATSU HIROSHI,OSHIMA HIROYUKI,IWANO HIDEAKI,et al. Semiconductor photoelectronic device. JP1986108187A. 1986-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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