Manufacture of semiconductor laser array device
文献类型：专利
| 作者 | HAMADA TAKESHI; WADA MASARU; KUME MASAHIRO; ITO KUNIO |
| 发表日期 | 1986-11-05 |
| 专利号 | JP1986248582A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser array device |
| 英文摘要 | PURPOSE:To obtain a shape synchronized type semiconductor laser array with good reproducibility, by forming a plurality of grooves, through which light from a light emitting part is guided on a substrate, and melting back the protruded parts on the substrate, which isolate said grooves. CONSTITUTION:A mesa is formed on the surface of a p-type GaAs substrate Then, an n-type GaAs blocking layer 2 is formed on said substrate Thereafter, a plurality of ridges for forming a plurality of grooves are formed on the surface of a wafer. On the mesa, on which the ridges are formed, a p-type GaAlAs clad layer 3, a GaAlAs active layer 4, an n-type GaAs clad layer 5 and an n-type GaAs contact layer 6 are continuously grown. The width of the inner ridge between the grooves is narrow. Therefore, the height of said ridge becomes lower owing to the melt back of the ridge. Thus, the light absorption at this part is decreased, and the optical coupling between light emitting parts is carried out efficiently. As a result, the phase synchronized type laser array can be obtained with good reproducibility. |
| 公开日期 | 1986-11-05 |
| 申请日期 | 1985-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65837]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HAMADA TAKESHI,WADA MASARU,KUME MASAHIRO,et al. Manufacture of semiconductor laser array device. JP1986248582A. 1986-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。