Semiconductor laser device comprising a SiGe single crystal substrate
文献类型：专利
| 作者 | YOKOTSUKA, TATSUO; NAKAJIMA, MASATO |
| 发表日期 | 1991-12-11 |
| 专利号 | EP0460939A2 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device comprising a SiGe single crystal substrate |
| 英文摘要 | This invention relates to a semiconductor laser device which comprises a monocrystal substrate (1) of consisting essentially of SiaGe1-a, wherein 0 < a ≦ 0.25, and a compound semiconductor layer which is formed on one side of the substrate and is lattice-matched with the substrate. The compound semiconductor layer includes an Al-free active layer (3) made of GabIn1-bP wherein 0.51 < b ≦ 0.64 and first (2) and second clad (4) layers sandwiching the active layer (3) therebetween wherein said first clad layer (2) is formed on the one side of the substrate (1). The first and second clad layer (2,4) are each made of (Al₀Ga1-o)dIn1-dP, wherein 0.4 ≦ c ≦ 1 and 0.51 < d ≦ 0.64. The laser device of the invention ensures lasing at a short wavelength with good durability. |
| 公开日期 | 1991-12-11 |
| 申请日期 | 1991-06-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65840]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | YOKOTSUKA, TATSUO,NAKAJIMA, MASATO. Semiconductor laser device comprising a SiGe single crystal substrate. EP0460939A2. 1991-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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