Distributed reflection type semiconductor laser with wavelength control function
文献类型：专利
| 作者 | KANO FUMIYOSHI; TOMORI YUICHI |
| 发表日期 | 1990-07-05 |
| 专利号 | JP1990174181A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection type semiconductor laser with wavelength control function |
| 英文摘要 | PURPOSE:To obtain the narrow spectral line width even at a variable time of the wavelength by providing gratings all over or partly on a non-active waveguide path layer at the front end and the rear end of an active waveguide path and simultaneously injecting a current to perform wavelength control with the narrow spectral line width. CONSTITUTION:Gratings 10 are provided on the non-active waveguide path layers 3 at the front end and the rear end of an active waveguide path layer 2 formed in a prescribed region on a semiconductor substrate 1 all over or partially along the prescribed positions respectively. Of the layers 3, the regions 101 and 102 provided only with the part whereon the gratings 10 are formed function as distribution reflectors having a wavelength control function, while a region 104 provided only with the part where no grating 10 is formed functions as a light waveguide path having a phase control function. Then, a current is simultaneously injected into the regions 102 to 104 at the front and the rear of the region 101 provided with the active waveguide path layer 2 for performing wavelength control with the narrow spectral line width. Thereby, the oscillation wavelength can be changed while maintaining the narrow spectral line width. |
| 公开日期 | 1990-07-05 |
| 申请日期 | 1988-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65842]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KANO FUMIYOSHI,TOMORI YUICHI. Distributed reflection type semiconductor laser with wavelength control function. JP1990174181A. 1990-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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