Strain quantum well semiconductor laser
文献类型：专利
| 作者 | YAMADA HIROHITO |
| 发表日期 | 1992-02-19 |
| 专利号 | JP1992049689A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Strain quantum well semiconductor laser |
| 英文摘要 | PURPOSE:To eliminate the overflow of electrons, to execute a uniform carrier injection operation and to obtain a strain quantum well laser whose gain spectrum is sharp and whose threshold value is low by a method wherein the lattice constant of a semiconductor forming a well layer is made larger than the lattice constant of a substrate. CONSTITUTION:A strain quantum well semiconductor laser where a semiconductor forming a well layer is composed of InXGa1-XAsYP1-Y or InAsZP1-Z and its lattice constant is larger than the lattice constant of a substrate is formed. X, Y and Z are set as 0<=X,Y, and Z<= Its manufacturing method is as follows: an n-InP buffer layer 14 is grown in 0.1mum on an n-InP substrate 15 by an MOVPE method; then, an InGaAsP barrier 12 is grown in 3mum; and an In0.8 Ga0.2As0.6P0.4 well 13 is grown in 40Angstrom on it. The growth operation of the well and the barrier is repeated five times; and a five-layer multiple quantum well structure is manufactured. In addition, a p-InP clad layer 11 is grown in about 11mum on it. A strain quantum well wafer manufactured in this manner is buried in a DC-PBH structure. Lastly, a p-side electrode and an n-side electrode are vapor-deposited. |
| 公开日期 | 1992-02-19 |
| 申请日期 | 1990-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65847]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | YAMADA HIROHITO. Strain quantum well semiconductor laser. JP1992049689A. 1992-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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