Manufacture of surface-emitting type semiconductor laser device
文献类型：专利
| 作者 | ISHIKAWA TORU; IBARAKI AKIRA; FURUSAWA KOTARO |
| 发表日期 | 1991-12-13 |
| 专利号 | JP1991283481A |
| 著作权人 | 科学技術振興事業団 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of surface-emitting type semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent pit flaws from being induced in a current block layer and a reactive current path from being formed so as to enable a semiconductor laser device to be lessened in threshold current and improved in uniformity by a method wherein a block layer of the same conductivity type is newly provided surrounding an active region. CONSTITUTION:An active region 5 is provided at the center of a substrate, and a first block layer 9 and a second block layer 10 different from each other in conductivity type are provided surrounding the active region 5. A pair of reflecting mirrors 3 and 13 is provided onto the substrate sandwiching the active region 5 and the block layers 9 and 10 between them to constitute a surface- emitting type semiconductor laser device. At this point, after the second block layer 10 is formed, a third block layer 11 of the same conductivity type with the second block layer is provided surrounding the active region 5. By this setup, pit flaws and thin-wall parts induced in the second block layer 10 are recovered by the third block layer 1 Therefore, a current block effect can be prevented from deteriorating due to a P-N reverse bias. |
| 公开日期 | 1991-12-13 |
| 申请日期 | 1990-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65850]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 科学技術振興事業団 |
| 推荐引用方式 GB/T 7714 | ISHIKAWA TORU,IBARAKI AKIRA,FURUSAWA KOTARO. Manufacture of surface-emitting type semiconductor laser device. JP1991283481A. 1991-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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