Semiconductor laser and process for fabricating the same
文献类型：专利
| 作者 | UENO, YOSHIYASU, C/O NEC CORPORATION |
| 发表日期 | 1992-02-05 |
| 专利号 | EP0437243A3 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and process for fabricating the same |
| 英文摘要 | A semiconductor laser (1) has a super-lattice active layer to which a high density impurity as equal to or over 1 X 10¹⁷ cm⁻³ is selectively diffused in the vicinity of a facet of the semiconductor laser (1), so that a high power output is realized. The active layer (14) in the impurity diffusion region (4) is formed in a three-layer structure comprising first, second and third semiconductor layers. The second semiconductor layer has an opposite type of conductivity as the first and third semiconductor layer, and is sandwiched thereby. In such a structure, a depletion layer is generated around the active layer (14), so that injection of current into the active layer is prevented. The blocking layer (18) also protects the active layer from the strain stress during a process of attaching the semiconductor laser to a heatsink. In the fabricating process, a dielectric is temporarily formed to be used as a mask in a selective diffusion and in a selective growth, so that it is not necessary to align a selective growth mask and an impurity diffusion region (4). An impurity selective diffusion into the multi-layer epitaxial layers having GaAs layer or AlGaAs layer as a surface layer is carried out using As compound as an impurity source, so that the crystal quality of the surface layer is hard to decrease. |
| 公开日期 | 1992-02-05 |
| 申请日期 | 1991-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65867]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | UENO, YOSHIYASU, C/O NEC CORPORATION. Semiconductor laser and process for fabricating the same. EP0437243A3. 1992-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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