Manufacture of two-dimensional multiple quantum well structure
文献类型：专利
| 作者 | EBE KOJI; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; SHINOHARA KOJI |
| 发表日期 | 1988-02-08 |
| 专利号 | JP1988029989A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of two-dimensional multiple quantum well structure |
| 英文摘要 | PURPOSE:To facilitate realization of a two-dimensional multiple quantum well structure by etching a side of a one-dimensional multiple quantum well layer by applying the RIE method having the conditions specified, and alternately stacking thin films made of a first and a second materials on the uneven side formed by the etching. CONSTITUTION:On a P-type GaAs substrate 1, a P-type Al0.3Ga0.7As clad layer 2 is grown, and then by applying the MBE method, a one-dimensional multiple quantum well active layer 3 is formed which consists of a multilayered film having AlGaAs films 3A and GaAs films 3B alternately stacked. Then, a photoresist film 4 is selectively formed on the surface of the active layer 3, and the RIE method is applied to etch the AlGaAs films 3A in the active layer 3 thereby forming recesses 3C. Next, after removing the photoresist film 4, the wafer is set in a hot wall epitaxial growth apparatus which is a kind of vacuum evaporation system, and GaAs films 7B and AlGaAs films 7A are formed as many as required, whereby a two-dimensional multiple quantum well structure is completed. |
| 公开日期 | 1988-02-08 |
| 申请日期 | 1986-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65874]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | EBE KOJI,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. Manufacture of two-dimensional multiple quantum well structure. JP1988029989A. 1988-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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