Vapor phase growth device
文献类型：专利
| 作者 | NAKANISHI TAKATOSHI |
| 发表日期 | 1986-06-16 |
| 专利号 | JP1986128513A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Vapor phase growth device |
| 英文摘要 | PURPOSE:To extend the precise flow control range of the quantity of a gas by arranging a plurality of normally OFF type mass flowmeters in series with a flow path in order to control the flow rate of hydrogen gas flowing into a TMA bubbler. CONSTITUTION:Mass flowmeters 31, 32 represent normally-open type mass flow controllers, and are mounted in series with a hydrogen gas flow path. The normally-open type mass flow controller opens a gas flow path-that is, it is brought to the state in which the flowing of a gas is not disturbed-when stopping a power supply required for operating the controller. Consequently, when the maximum control flow rate is set at 10ml/min in the mass flow controller 31 and the maximum control flow rate of the mass flow controller 32 is set at 500ml/min, the closing of a power supply for the mass flow controller 31 is brought to an OFF state on the growth of a clad layer when manufacturing an epitaxial wafer for a semiconductor laser, and the mass flow controller 32 may be operated. On the growth of an active layer, on the contrary, the closing of the power supply for the mass flow controller 32 is brought to the OFF state, and the mass flow controller 31 may be worked. |
| 公开日期 | 1986-06-16 |
| 申请日期 | 1984-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65875]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | NAKANISHI TAKATOSHI. Vapor phase growth device. JP1986128513A. 1986-06-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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