Multiple-wavelength semiconductor laser
文献类型：专利
| 作者 | OKUDA MASAHIRO |
| 发表日期 | 1990-04-24 |
| 专利号 | JP1990111091A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiple-wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To enable optic characteristics of a laser beam of different wavelength to be oscillated from each active stripe region by allowing the reflection rate on a resonator edge surface owned by each active stripe region to be different. CONSTITUTION:A low-reflection film 3 is coated to the rear-edge surface which is one of the reflection surfaces constituting a resonator of an active stripe region 1 and a high-reflection film 4 is coated to the rear-edge surface of one of the reflection surfaces of an active stripe region 2. Thus, since reflection loss is small in the stripe region 2, oscillation occurs even if the current injected there is small, thus achieving oscillation at a quantum level with low energy level. On the other hand, reflection loss becomes larger at the active stripe region 1 and large amount of current needs to be injected to achieve oscillation. Thus, the semiconductor laser unit is formed in one piece within one element and each semiconductor laser unit can be so structured as to improve optical characteristics including astigmatism and near field pattern and less variations without being affected by selection of wavelength. |
| 公开日期 | 1990-04-24 |
| 申请日期 | 1988-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65876]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | OKUDA MASAHIRO. Multiple-wavelength semiconductor laser. JP1990111091A. 1990-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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