Multi-beam semiconductor laser and method for producing the same
文献类型：专利
| 作者 | YOSHIDA ICHIRO; KATSUYAMA TSUKURU; HASHIMOTO JUNICHI |
| 发表日期 | 1993-08-21 |
| 专利号 | CA2089900A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-beam semiconductor laser and method for producing the same |
| 英文摘要 | This is disclosed a multi-beam semiconductor lasercomprising: an active layer; a first and second claddinglayer sandwiching the active layer, the second claddinglayer being made of a first material; a contact layerprovided on the second cladding layer; a current blocklayer provided in the second cladding layer, the currentblock layer being made of a second material and beingspaced from the active layer with a predetermineddistance; a dividing part provided above the currentblock for physically dividing the contact layer into twoareas; and electrodes respectively provided on thedivided areas of the contact layer. |
| 公开日期 | 1993-08-21 |
| 申请日期 | 1993-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65878]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YOSHIDA ICHIRO,KATSUYAMA TSUKURU,HASHIMOTO JUNICHI. Multi-beam semiconductor laser and method for producing the same. CA2089900A1. 1993-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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