Method of making tunable semiconductor laser
文献类型：专利
| 作者 | SAKATA, YASUTAKA; YAMAGUCHI, MASAYUKI; SASAKI, TATSUYA |
| 发表日期 | 1993-02-17 |
| 专利号 | EP0527615A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of making tunable semiconductor laser |
| 英文摘要 | In a method of making a tunable twin guide (TTG) type tunable semiconductor laser, over the surface of a semiconductor substrate (5) of one conductivity type, a tuning layer (22), a central layer (23) of the opposite conductivity type, and an active layer (24) are sequentially deposited over one another by a selective epitaxy method such as metal organic vapor phase epitaxy (MOVPE). Each layer is stripe-shaped. This method differs from conventional methods in which the processing of semiconductor elements for defining the current path/optical waveguide inside the laser is carried out by etching. |
| 公开日期 | 1993-02-17 |
| 申请日期 | 1992-08-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65880]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | SAKATA, YASUTAKA,YAMAGUCHI, MASAYUKI,SASAKI, TATSUYA. Method of making tunable semiconductor laser. EP0527615A1. 1993-02-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。