Dry etching method
文献类型：专利
| 作者 | SHIMADA KATSUTO |
| 发表日期 | 1992-07-07 |
| 专利号 | JP1992188827A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Dry etching method |
| 英文摘要 | PURPOSE:To make the vertical etching step feasible for simplifying the manufacturing prosses by a method wherein, in order to dry etch the compound semiconductor region on a semiconductor substrate, the thickness of a photoresist is made larger than the etching depth of the semiconductor region. CONSTITUTION:A GaAs substrate 101 is coated with a photoresist 102. At this time, the thickness of the resist 102 is made larger than the etching depth or the substrate 102. Next, a square pattern is formed by photolithographic step and then the substrate 101 is dryetched away by reaction ion beam etching step using chlorine gas. At this time, since the thickness of the resist 102 is made larger than the etching depth of the substrate 101, the processing section perpendicular to the substrate 101 can be formed. Through these procedures, only one layer of the resist 102 will suffice for a mask so as to simplify the manufacturing processes of a semiconductor device thereby making the vertical etching step feasible. |
| 公开日期 | 1992-07-07 |
| 申请日期 | 1990-11-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65881]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Dry etching method. JP1992188827A. 1992-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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