Optical integrated element and manufacture of the same
文献类型：专利
| 作者 | ADAKA SABURO |
| 发表日期 | 1986-11-05 |
| 专利号 | JP1986248489A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated element and manufacture of the same |
| 英文摘要 | PURPOSE:To reduce a parasitic capacity and a dark current and realize a high- speed operation of an optical integrated element by a method wherein a step produced between a semiconductor laser and a photodiode and a field effect transistor is filled with SiO2. CONSTITUTION:A groove with a reverse trapezoid cross-section is formed in a semi-insulating GaAs substrate An N type layer is deposited over the whole surface by liquid phase deposition and the N layer 3 is removed by etching except the part on the bottom surface in the groove. Then an I-type GaAs layer, an I-type GaAlAs window layer and an I-type GaAs cap layer are deposited by liquid phase deposition over the whole surface and etched. After SOG is applied by spin coating, a step in the semi-insulating GaAs substrate is filled by baking. Then, after the implantation of an N type layer d14 and the implantation of an N-type layer 13 are carried out by utilizing a resist 16 as a mask, positive side diffusion of a photodiode is carried out. Further, a source electrode 10, a drain electrode 11 and a negative side electrode 12 of the photodiode are deposited by a vacuum evaporation and a positive side electrode 18 and a gate electrode 9 are formed. |
| 公开日期 | 1986-11-05 |
| 申请日期 | 1985-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65883]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ADAKA SABURO. Optical integrated element and manufacture of the same. JP1986248489A. 1986-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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