Manufacture of single wavelength laser
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI |
| 发表日期 | 1991-04-10 |
| 专利号 | JP1991084984A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of single wavelength laser |
| 英文摘要 | PURPOSE:To reduce the waveguide loss and to enable a low threshold value and an operation of high efficiency by a method wherein periodic grooves are formed on a semiconductor substrate and a semi-insulating layer whose thickness changes periodically is laid on said grooves in order to form a channel which effects current injection into an active layer periodically by impurity diffusion from the substrate. CONSTITUTION:Periodic grooves 42 are formed on a substrate 1 by using a conductor film 2 as a mask and an InP semi-insulating layer 22 is grown selectively in the grooves 42 by using a dielectric film 21 as a mask. Next, the dielectric film 21 is removed and a thin InP semi-insulating layer 32, an InGaAsP active layer 3, an N-type InP clad layer 4 and an N-type InGaAsP contact layer 5 are crystal-grown in order. At this time, by a heat treatment at the time of crystal growth or after the crystal growth, impurities in the P-group InP substrate 1 are diffused in the InP semi-insulating layers 22 and 23 and a part of the thin InP semi-insulating layer 32 formed by the second crystal growth is converted into P-type. Thus, a channel 6 for effecting periodic injection of carriers into the InGaAsP active layer 3 is formed. In the InGaAsP active layer 3, a current is injected through the channel 6 so that a periodic carrier density distribution is formed. |
| 公开日期 | 1991-04-10 |
| 申请日期 | 1989-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65899]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI. Manufacture of single wavelength laser. JP1991084984A. 1991-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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