Manufacture of distortion quantum well semiconductor laser element
文献类型：专利
| 作者 | IJICHI TETSURO; KIKUTA TOSHIO |
| 发表日期 | 1992-08-28 |
| 专利号 | JP1992241488A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of distortion quantum well semiconductor laser element |
| 英文摘要 | PURPOSE:To provide a method for fabricating a distortion quantum well semiconductor laser element with which ridge width can be formed with good repeatability among respective manufacture lots and also stable coupling efficiency can be obtained when the element is coupled with a waveguide path such as an optical fiber. CONSTITUTION:This is a method for fabricating a distortion quantum well semiconductor laser element 201, comprising steps for providing a contact layer 408 made of GaAs on a clad layer 406, forming a semiconductor layer 102 made of InGaP thinner than the contact layer 408 on the contact layer 408 and selectively etching the contact layer 408 against the semiconductor layer 102 with the semiconductor layer 102 used as a mask. |
| 公开日期 | 1992-08-28 |
| 申请日期 | 1991-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65900]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IJICHI TETSURO,KIKUTA TOSHIO. Manufacture of distortion quantum well semiconductor laser element. JP1992241488A. 1992-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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