Semiconductor laser with AlInP or AlGaInP burying layer and fabrication method thereof
文献类型：专利
| 作者 | KOBAYASHI, RYUJI, C/O NEC CORP.; KOBAYASHI, KENICHI, C/O NEC CORP.; HOTTA, HITOSHI, C/O NEC CORP. |
| 发表日期 | 1995-07-26 |
| 专利号 | EP0664592A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with AlInP or AlGaInP burying layer and fabrication method thereof |
| 英文摘要 | A semiconductor laser having improved reliability. The laser contains an AIGalnP first cladding layer of a first conductivity type, an AIGalnP second cladding layer of a second conductivity type that forms a mesa stripe, an active layer made of an undoped GaInP layer, an undoped AlGaInP layer, or a quantum well layer of an undoped GaInP sublayer and an undoped AlGaInP sublayer. The laser further contains a burying layer made of an AlxIn1-xP or (AlyGa1- y)xIn1-xP layer, which is placed at both sides of the mesa stripe to bury the stripe. The burying layer is larger in energy band gap than the active layer and smaller in refractive index than the second cladding layer. The burying layer has first regions that are contacted with and extend along respective side faces of the mesa stripe. An AI composition x of the first regions is set so that the first regions are lattice-matched to GaAs. The burying layer has second regions that are joined with respective bottom ends of the first regions and extend along the active layer. An AI composition x of the second regions is set so that the second regions are lattice-matched or are not lattice-matched to GaAs. |
| 公开日期 | 1995-07-26 |
| 申请日期 | 1995-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65907]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | KOBAYASHI, RYUJI, C/O NEC CORP.,KOBAYASHI, KENICHI, C/O NEC CORP.,HOTTA, HITOSHI, C/O NEC CORP.. Semiconductor laser with AlInP or AlGaInP burying layer and fabrication method thereof. EP0664592A1. 1995-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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