Liquid epitaxial growth, manufacture of semiconductor laser device and liquid epitaxial growth jig
文献类型：专利
| 作者 | KOBAYASHI UICHIRO |
| 发表日期 | 1990-06-26 |
| 专利号 | JP1990165621A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid epitaxial growth, manufacture of semiconductor laser device and liquid epitaxial growth jig |
| 英文摘要 | PURPOSE:To form a film having a uniform thickness distribution over a wafer surface with good reproducibility by a method wherein at least a partial region of the wafer main surface is brought into contact with solution for a period different from the period of contact with the other region. CONSTITUTION:When a thin film such as an active layer is formed on a wafer 3, if the shape of a solution sink 5 which contains solution for the growth of the film is a conventional rectangle, the thickness of an epitaxial growth layer of the center part of the wafer 3 becomes larger than the thickness of the other part. Therefore, the shape is modified to, for instance, a hand-drum shape 40 in accordance with the distribution of the film thickness in the wafer surface. Because of this modification, when the solution sink 5 is slid on the wafer 3, the contact period with the solution is shorter near the center of the wafer than in the other part and the growth of the epitaxial layer is somewhat suppressed. As a result, the distribution of the thickness of the formed film in the wafer surface is improved. With this constitution, as the liquid epitaxial growth is performed for a required period of contact with the respective parts of the wafer surface, an epitaxial growth layer having a thin and uniform thickness can be formed with good reproducibility. |
| 公开日期 | 1990-06-26 |
| 申请日期 | 1988-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65908]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI UICHIRO. Liquid epitaxial growth, manufacture of semiconductor laser device and liquid epitaxial growth jig. JP1990165621A. 1990-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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