Photoelectron composite semiconductor device
文献类型：专利
| 作者 | USAGAWA TOSHIYUKI; UOMI KAZUHISA; GOSHIMA SHIGEO; KAWADA MASAHIKO |
| 发表日期 | 1991-03-06 |
| 专利号 | JP1991052282A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectron composite semiconductor device |
| 英文摘要 | PURPOSE:To simultaneously optimize an electronic element and an optical element through the same epitaxial layer by sharing one or two layers of a secondary carrier to be formed at the semiconductor heterojunction interface in the active layer of the electronic element and the light emitting layer of the optical element. CONSTITUTION:N-type AlGaAs layers 4, 8 are disposed in a carrier supply layer for forming secondary electron gases 50, 50' in high purity GaAs layers 6, 10. On the contrary, a p-type AlGaAs layer 3 having large Al composition for an emitter layer, a p-type AlGaAs layer 11 having small Al composition and low impurity concentration for a collector layer, and a p-type AlGaAs layer 12 having large Al composition and high impurity concentration are disposed. As an electronic device, crystal specifications for forming the PN junction of emitter and base are so determined as to completely deplete the layers 4, 8. Thus, a structure for simultaneously optimizing the electronic device and an optical device can be obtained by using the same epitaxial layer. |
| 公开日期 | 1991-03-06 |
| 申请日期 | 1989-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65921]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | USAGAWA TOSHIYUKI,UOMI KAZUHISA,GOSHIMA SHIGEO,et al. Photoelectron composite semiconductor device. JP1991052282A. 1991-03-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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