Double hetero-junction structure and semiconductor laser element
文献类型：专利
| 作者 | SHIBATA HAJIME; MIHASHI YOSHINOBU; KONDO HIDEKAZU; OOTA TOMOHIRO |
| 发表日期 | 1992-11-20 |
| 专利号 | JP1992333291A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double hetero-junction structure and semiconductor laser element |
| 英文摘要 | PURPOSE:To enable optical recording media to be mounted high in density by a method wherein a diamond single crystal is made to serve as an active layer, and a clad layer is formed of cubic boron nitride(cBN) single crystal. CONSTITUTION:A P-type cBN layer 1, a diamond layer 2, and an N-type cBN layer 3 are successively laminated on a substrate 4, and a double hetero-junction is formed by the junction of the layers 1, 2, and 3. The diamond layer 2 is functions as a light emitting region or an active layer. The cBN layers 1 and 3 are made to serve as clad layer. As the band gap of cBN is larger than that of diamond, a potential barrier induced at a junction interface between them prevents thermal diffusion from the active layer 3 to the cBN clad layers 1 and 3. Light emitted inside the diamond active layer 2 is totally reflected by the junction interface of the layer 2 with the clad layers 1 and 3, so that the diamond layer 2 is small in emission loss. By this setup, optical recording media can be mounted high in density. |
| 公开日期 | 1992-11-20 |
| 申请日期 | 1991-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65924]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | SHIBATA HAJIME,MIHASHI YOSHINOBU,KONDO HIDEKAZU,et al. Double hetero-junction structure and semiconductor laser element. JP1992333291A. 1992-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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