Variable-wavelength semiconductor laser and gas sensor using same
文献类型：专利
| 作者 | MORI, HIROSHI; KIKUGAWA, TOMOYUKI; TAKAHASHI, YOSHIO; SUZUKI, TOSHIYUKI; KIMURA, KIYOSHI |
| 发表日期 | 2006-08-24 |
| 专利号 | US20060187976A1 |
| 著作权人 | MORI HIROSHI |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable-wavelength semiconductor laser and gas sensor using same |
| 英文摘要 | A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type cladding layer disposed above the active layer, and wavelength selecting section for causing to selectively oscillate only a specific wavelength from the light generated in the active layer. The tunable wavelength semiconductor layer capable of oscillating at the specific wavelength can be performed by injecting current into the active layer, and the specific wavelength can be varied by changing the magnitude of the current. A device length showing a length in a propagation direction of the light generated in the active layer is about 200 μm to 500 μm, and a width of the active layer orthogonal to the propagation direction of the light generated in the active layer, and showing a length in a direction parallel to the n-type semiconductor substrate is about 1 μm to 2 μm. The p-type cladding layer includes a lightly doped cladding layer having a low impurity concentration and a heavily doped cladding layer having a high impurity concentration which are sequentially arranged from the active layer side. |
| 公开日期 | 2006-08-24 |
| 申请日期 | 2005-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65927]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MORI HIROSHI |
| 推荐引用方式 GB/T 7714 | MORI, HIROSHI,KIKUGAWA, TOMOYUKI,TAKAHASHI, YOSHIO,et al. Variable-wavelength semiconductor laser and gas sensor using same. US20060187976A1. 2006-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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