Vertical structure semiconductor devices
文献类型：专利
| 作者 | YOO, MYUNG CHEOL |
| 发表日期 | 2005-11-10 |
| 专利号 | WO2005104780A2 |
| 著作权人 | VERTICLE, INC |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical structure semiconductor devices |
| 英文摘要 | The invention provides a reliable way to fabricate a new vertical structure compound semiconductor device with improved light output and a laser lift-off processes for mass production of GaN-based compound semiconductor devices. A theme of the invention is employing direct metal support substrate deposition prior to the LLO by an electro-plating method to form an n-side top vertical structure. In addition, an ITO DBR layer is employed right next to a p-contact layer to enhance the light output by higher reflectivity. A perforated metal wafer carrier is also used for wafer bonding for easy handling and de-bonding. A new fabrication process is more reliable compared to the conventional LLO-based vertical device fabrication. Light output of the new vertical device having n-side up structure is increased 2 or 3 times higher than that of the lateral device fabricated with same GaN/InGaN epitaxial films. |
| 公开日期 | 2005-11-10 |
| 申请日期 | 2005-04-27 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65934]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VERTICLE, INC |
| 推荐引用方式 GB/T 7714 | YOO, MYUNG CHEOL. Vertical structure semiconductor devices. WO2005104780A2. 2005-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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