Manufacture of multi-wavelength semiconductor laser
文献类型：专利
| 作者 | BAN YUZABURO; SERIZAWA HIROMOTO |
| 发表日期 | 1988-09-21 |
| 专利号 | JP1988227089A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of multi-wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To form active layers having different compositions simultaneously by one time epitaxial growth by irradiating one part of a substrate with beams when laser structure is epitaxial-grown. CONSTITUTION:When an active layer is epitaxial-grown, a composition changes only in the laser applying section when the active layer is grown, irradiating the half of the active layer with laser beams. Consequently, laser structure having active layers having different compositions in the laser applying section and a non-applying section can be grown. An Al composition in the laser applying section is increased when ArF excimer laser beams are applied especially when AlGaAs is grown through an organometallic thermal decomposition method by using (CH3)3Al, (CH3)3Ga. Accordingly, when an AlGaAs layer is employed as the active layer, the laser applying section can oscillate laser beams in a short-wave length more than the non-applying section. |
| 公开日期 | 1988-09-21 |
| 申请日期 | 1987-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65937]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | BAN YUZABURO,SERIZAWA HIROMOTO. Manufacture of multi-wavelength semiconductor laser. JP1988227089A. 1988-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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