Light-emitting element provided with active waveguide and its manufacture
文献类型：专利
| 作者 | SUZUKI RYOJI; NAKAJO NAOKI; KURATA KAZUHIRO |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225988A |
| 著作权人 | HITACHI CABLE LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting element provided with active waveguide and its manufacture |
| 英文摘要 | PURPOSE:To easily manufacture this element and to enhance reproducibility and stability by a method wherein a protrusion-shaped mesa stripe, formed on a semiconductor substrate, whose cross section is in a trapezoid shape is not used and a mesa stripe formed to be in a peak shape is used. CONSTITUTION:A mesa stripe 10 whose cross section is in a trapezoid shape is formed on a p-type GaAs substrate 1 by using a photolithographic technique. When an etching operation is executed, the mesa stripe can be formed to be a mesa stripe 10b in a peak shape. Then, an n-type current barrier layer is epitaxially grown on the substrate 1 by using an LPE method. When a cooling rate at this growth operation, an oversaturation degree and the growth time are set properly by taking into consideration the height of the peak-shaped mesa stripe 10b at this time, the layer is epitaxially grown. When this wafer is etched by using an etchant which does not damage the flatness on its surface, one part of the mesa stripe 10b is exposed in a certain width. Since individual layers are grown to be flat on the current barrier layer 2, the interface at the individual layers is steep and a good epitaxial layer can be obtained. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65938]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI CABLE LTD |
| 推荐引用方式 GB/T 7714 | SUZUKI RYOJI,NAKAJO NAOKI,KURATA KAZUHIRO. Light-emitting element provided with active waveguide and its manufacture. JP1991225988A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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