Manufacture of distributed feedback-type semiconductor laser
文献类型：专利
| 作者 | FURUKAWA RYOZO; SHINOZAKI KEISUKE; FUKUNAGA TOSHIAKI |
| 发表日期 | 1989-07-05 |
| 专利号 | JP1989170085A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of distributed feedback-type semiconductor laser |
| 英文摘要 | PURPOSE:To protect each layer against oxidation by a method wherein a melt- back preventive layer and an oxidation preventive layer are laminated through a vapor phase growth method and the exposure of the melt-back layer and the lamination of a clad layer and an active layer are performed through a single liquid phase epitaxial growth. CONSTITUTION:An Al2Ga1-zAs melt-back preventive layer 28 and a GaAs oxidation preventive layer 30 are successively laminated in this sequence on a corrugation 14 and a stripe-like groove 12 of a ground through a vapor phase growth method, and the oxidation preventive layer 30 is made to melt-back so as to expose the melt-back preventive layer 28 and an AlxGa1-xAs lower clad layer 16 with a flat surface, an AlyGa1-yAs active layer 18, and an AlxGa1-xAs upper clad layer 20 are formed in this sequence through a single liquid phase epitaxial growth process. By these processes, a semiconductor laser can be manufactured without making the shoulder of a groove and a corrugation of a ground vary in shape and also a melt-back preventive layer, a lower clad layer, an active layer, and an upper clad layer oxidized. |
| 公开日期 | 1989-07-05 |
| 申请日期 | 1987-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65942]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FURUKAWA RYOZO,SHINOZAKI KEISUKE,FUKUNAGA TOSHIAKI. Manufacture of distributed feedback-type semiconductor laser. JP1989170085A. 1989-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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