Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers
文献类型：专利
| 作者 | MARUYAMA, TSUYOSHI; ISHII, KAZUHISA; SASAKURA, KEN; TOMITA, SHOTARO; KAWAGUCHI, KEIZO; TOMIYOSHI, TOSHIO |
| 发表日期 | 2005-07-07 |
| 专利号 | US20050145857A1 |
| 著作权人 | STANLEY ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers |
| 英文摘要 | The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers. |
| 公开日期 | 2005-07-07 |
| 申请日期 | 2005-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65943]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | STANLEY ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | MARUYAMA, TSUYOSHI,ISHII, KAZUHISA,SASAKURA, KEN,et al. Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers. US20050145857A1. 2005-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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