Semiconductor light emitting device with super lattice structure
文献类型：专利
| 作者 | SUZUKI YOSHIFUMI; NAGANUMA MITSURU; OKAMOTO HIROSHI |
| 发表日期 | 1982-09-20 |
| 专利号 | JP1982152178A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device with super lattice structure |
| 英文摘要 | PURPOSE:To obtain a semiconductor light emitting device with a low threshold current density in short wave bands and a longer service life by a method wherein either the active layer or clad layers or both are composed of a super lattice structure consisting of AlyGa1-ySb and AlxGa1-xSb layers. CONSTITUTION:Successively grown on a GaSb substrate 1 by the molecular beam epitaxial method or MOCVD method or the like are a lower clad layer 2 of a 1-2mum thick AlzGa1-zSb film, active layer 3 with a super lattice structure (0<=y<=0.2<=x<=z<=1, with the thickness of each layer not more than 200Angstrom ) of AlyGa1-ySb-AlxGa1-xSb, upper clad layer 4 of a 1-2mum thick AlzGa1-zSb film, and electrode layer 5 of an approximately 1mum thick GaSb film. A change in the super lattice structure AlyGa1-ySb layer 7 between 10-200Angstrom results in a change in emitted light lengths between 0-7mum. Replacing Sb with As results in the emission in a band of waves shorter than 7,000Angstrom . |
| 公开日期 | 1982-09-20 |
| 申请日期 | 1981-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65946]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | SUZUKI YOSHIFUMI,NAGANUMA MITSURU,OKAMOTO HIROSHI. Semiconductor light emitting device with super lattice structure. JP1982152178A. 1982-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。