Optical modulator and integratation type optical modulator and photodetector as well as production thereof
文献类型:专利
作者 | AJISAWA AKIRA; TERAKADO TOMOJI; YAMAGUCHI MASAYUKI; KOMATSU YOSHIRO |
发表日期 | 1991-08-29 |
专利号 | JP1991198025A |
著作权人 | 日本電気株式会社 |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Optical modulator and integratation type optical modulator and photodetector as well as production thereof |
英文摘要 | PURPOSE:To attain ultra-high-speed modulation and the widening of a frequency range and to improve a yield and uniformity by using a high-resistance semiconductor substrate and embedding a PIN structure optical waveguide with the high-resistance layer. CONSTITUTION:Striped means 69 having the pin structure in which an I layer of a low carrier concn. is formed as the semiconductor optical waveguide layer 66, the high-resistance layers 70 on both side faces of the striped means, and means for impressing electric fields to the semiconductor optical waveguide layer 66 are provided on the high-resistance semiconductor substrate 6 The inter-electrode distance is made longer than heretofore by using the high- resistance semiconductor substrate and the embedding structure of the semiconductor high- resistance layers. The wiring capacity and pad capacity are, therefore, decreased and the capacity over the entire part of the element is determined nearly by a junction capacity and the frequency range of the optical modulator is widened. The ultra-high-speed modulation as the integration type optical modulator is executed by having the PIN structure formed on the high-resistance substrate and embedded by the high-resistance layers. Thus, the ultra- high-speed modulation and the widening of the frequency range are possible in this way and the yield is improved. |
公开日期 | 1991-08-29 |
申请日期 | 1989-12-27 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/65952] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 日本電気株式会社 |
推荐引用方式 GB/T 7714 | AJISAWA AKIRA,TERAKADO TOMOJI,YAMAGUCHI MASAYUKI,et al. Optical modulator and integratation type optical modulator and photodetector as well as production thereof. JP1991198025A. 1991-08-29. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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