中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical modulator and integratation type optical modulator and photodetector as well as production thereof

文献类型:专利

作者AJISAWA AKIRA; TERAKADO TOMOJI; YAMAGUCHI MASAYUKI; KOMATSU YOSHIRO
发表日期1991-08-29
专利号JP1991198025A
著作权人日本電気株式会社
国家日本
文献子类发明申请
其他题名Optical modulator and integratation type optical modulator and photodetector as well as production thereof
英文摘要PURPOSE:To attain ultra-high-speed modulation and the widening of a frequency range and to improve a yield and uniformity by using a high-resistance semiconductor substrate and embedding a PIN structure optical waveguide with the high-resistance layer. CONSTITUTION:Striped means 69 having the pin structure in which an I layer of a low carrier concn. is formed as the semiconductor optical waveguide layer 66, the high-resistance layers 70 on both side faces of the striped means, and means for impressing electric fields to the semiconductor optical waveguide layer 66 are provided on the high-resistance semiconductor substrate 6 The inter-electrode distance is made longer than heretofore by using the high- resistance semiconductor substrate and the embedding structure of the semiconductor high- resistance layers. The wiring capacity and pad capacity are, therefore, decreased and the capacity over the entire part of the element is determined nearly by a junction capacity and the frequency range of the optical modulator is widened. The ultra-high-speed modulation as the integration type optical modulator is executed by having the PIN structure formed on the high-resistance substrate and embedded by the high-resistance layers. Thus, the ultra- high-speed modulation and the widening of the frequency range are possible in this way and the yield is improved.
公开日期1991-08-29
申请日期1989-12-27
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/65952]  
专题半导体激光器专利数据库
作者单位日本電気株式会社
推荐引用方式
GB/T 7714
AJISAWA AKIRA,TERAKADO TOMOJI,YAMAGUCHI MASAYUKI,et al. Optical modulator and integratation type optical modulator and photodetector as well as production thereof. JP1991198025A. 1991-08-29.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。