中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser, manufacturing the same and semiconductor laser device

文献类型:专利

作者FUKAI, HARUKI; KARITA, HIDETAKA; NAKAMURA, ATSUSHI; YAMASHITA, SHIGEO
发表日期2006-06-22
专利号US20060131593A1
著作权人LUMENTUM JAPAN, INC.
国家美国
文献子类发明申请
其他题名Semiconductor laser, manufacturing the same and semiconductor laser device
英文摘要A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.
公开日期2006-06-22
申请日期2006-02-09
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/65956]  
专题半导体激光器专利数据库
作者单位LUMENTUM JAPAN, INC.
推荐引用方式
GB/T 7714
FUKAI, HARUKI,KARITA, HIDETAKA,NAKAMURA, ATSUSHI,et al. Semiconductor laser, manufacturing the same and semiconductor laser device. US20060131593A1. 2006-06-22.

入库方式: OAI收割

来源:西安光学精密机械研究所

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