Semiconductor laser, manufacturing the same and semiconductor laser device
文献类型:专利
作者 | FUKAI, HARUKI; KARITA, HIDETAKA; NAKAMURA, ATSUSHI; YAMASHITA, SHIGEO |
发表日期 | 2006-06-22 |
专利号 | US20060131593A1 |
著作权人 | LUMENTUM JAPAN, INC. |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser, manufacturing the same and semiconductor laser device |
英文摘要 | A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer. |
公开日期 | 2006-06-22 |
申请日期 | 2006-02-09 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/65956] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | LUMENTUM JAPAN, INC. |
推荐引用方式 GB/T 7714 | FUKAI, HARUKI,KARITA, HIDETAKA,NAKAMURA, ATSUSHI,et al. Semiconductor laser, manufacturing the same and semiconductor laser device. US20060131593A1. 2006-06-22. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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