Distributed bragg reflection type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | IKEDA SOTOMITSU; MIYAZAWA SEIICHI |
| 发表日期 | 1990-02-26 |
| 专利号 | JP1990056985A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed bragg reflection type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To prepare a DBR laser by a small number of growth by a method wherein an optical guide is formed, a diffraction grating is cut while the current constriction layer of an active region is shaped, an active layer is laminated and the active layer and the optical guide are optically coupled on the same straight line. CONSTITUTION:A clad layer 2 and an optical guide layer 3 are epitaxial-grown on a substrate The pitches of a diffraction grating are brought to l.lambda/2 ((l)represents an integer and lambda an oscillation wavelength in an active layer). When a I section is masked previously at that time, the diffraction grating is shaped only in a III section. the active region section I is left as current constriction sections on both sides of a resonator, and the DBR section III section is manufactured while leaving a central section in order to be changed into the optical guide. A clad layer 4, the active layer 5, a clad layer 6 and a cap layer 7 are formed onto the substrate 1, and lastly an insulating film 8 such as SiO2 is shaped for forming a current injection window, and P side electrode Au 9 and N side electrode Au 10 are evaporated. Accordingly, a DBR laser oscillated at a stable single wavelength by a small number of growth can be acquired. |
| 公开日期 | 1990-02-26 |
| 申请日期 | 1988-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65965]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | IKEDA SOTOMITSU,MIYAZAWA SEIICHI. Distributed bragg reflection type semiconductor laser and manufacture thereof. JP1990056985A. 1990-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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