Single quantum well ii-vi laser diode without cladding
文献类型：专利
| 作者 | CHENG, HWA; DEPUYDT, JAMES, M.; HAASE, MICHAEL, A.; QIU, JUN |
| 发表日期 | 1995-03-08 |
| 专利号 | EP0641494A1 |
| 著作权人 | MINNESOTA MINING AND MANUFACTURING COMPANY |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Single quantum well ii-vi laser diode without cladding |
| 英文摘要 | A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers (14, 16) of p-type and n-type ZnSe on an n-type GaAs substrate. A CdSe/ZnSe short-period strained-layer superlattice single quantum well active layer (12) is positioned between the guiding layers. An Au electrode (24) overlays the p-type guiding layer opposite the single quantum well active layer. The guiding layers have thicknesses which enable the substrate and Au electrode to confine the light beam generated by the device within the active layer and the guiding layers. |
| 公开日期 | 1995-03-08 |
| 申请日期 | 1993-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65967]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MINNESOTA MINING AND MANUFACTURING COMPANY |
| 推荐引用方式 GB/T 7714 | CHENG, HWA,DEPUYDT, JAMES, M.,HAASE, MICHAEL, A.,et al. Single quantum well ii-vi laser diode without cladding. EP0641494A1. 1995-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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