Semiconductor optical waveguide element
文献类型：专利
| 作者 | EHATA TOSHIKI; SASAYA YUKIHIRO; NISHIWAKI YOSHIKAZU; MATSUOKA HARUJI |
| 发表日期 | 1982-11-02 |
| 专利号 | JP1982178397A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical waveguide element |
| 英文摘要 | PURPOSE:To enable monolithic structure with every kind of semiconductor elements by forming plane multilayer structure formed by combining a high carrier concentration layer and a low carrier concentration layer, and a layer functioning as a waveguide layer. CONSTITUTION:Buffer layers 22 and waveguide layers 23 consists of N-AlY Ga1-YAs and N-AlXGa1-XAs of low carrier concentration (1-50X10cm), and substrates 24 in a figure a are obtained by growing N-AlZGa1-ZAs of high carrier concentration (1-50X10cm), to which Sn, Te, Se, Pb, etc. are doped, onto GaAs crystal substrates 25 of high carrier concentration in epitaxial shape. However, when Al concentration X, Y, Z(0<=X<1, 0 |
| 公开日期 | 1982-11-02 |
| 申请日期 | 1981-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65968]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | EHATA TOSHIKI,SASAYA YUKIHIRO,NISHIWAKI YOSHIKAZU,et al. Semiconductor optical waveguide element. JP1982178397A. 1982-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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