Current lateral injection type semiconductor laser
文献类型：专利
| 作者 | SASAOKA CHIAKI; FUJII HIROAKI |
| 发表日期 | 1990-09-14 |
| 专利号 | JP1990232981A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Current lateral injection type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser excellent in high speed modulation characteristic and in conformity with a FET manufacturing process by a method wherein a current lateral injection type semiconductor laser is formed on a semiconductor single crystal substrate. CONSTITUTION:In a current lateral injection type semiconductor laser, a groove is uniformly formed on a semi-insulating GaAs (100) substrate 101 along the direction of an optical waveguide, and the side wall of the groove is made to serve as an N-type contact layer 102. An N-type InGaP clad layer 103, an N-type GaAs active layer 104, a P-type clad layer 105, a P-type GaAs contact layer 106, and an electrode 107 are successively formed on the side wall and the base of the groove. By this setup, the semiconductor laser can be improved in high speed modulation characteristic and conformity with a FET manufacturing process. |
| 公开日期 | 1990-09-14 |
| 申请日期 | 1989-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65969]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SASAOKA CHIAKI,FUJII HIROAKI. Current lateral injection type semiconductor laser. JP1990232981A. 1990-09-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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