Optical waveguide and its production
文献类型：专利
| 作者 | YAMAZAKI KOJI |
| 发表日期 | 1990-02-15 |
| 专利号 | JP1990046408A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical waveguide and its production |
| 英文摘要 | PURPOSE:To execute effective confinement of light by covering a waveguide layer with a second clad layer consisting of a II-VI group compound semiconductor having a smaller refractive index than that of said waveguide layer. CONSTITUTION:A ZnS layer functioning as lower clad layer is formed on a GaAs substrate by an epitaxial growth by an MOCVD method, and a masking SiO2 5 film is deposited by a thermal CVD method. Then, the SiO2 film is patterned by a lithophotographic technique, and the SiO2 film at a part for forming a waveguide layer is removed by etching. A ZnSe waveguide layer is formed by using said patterned SiO2 film as mask. In this case, org. compds. of Zn and Se used as raw materials regulating a growth pressure to =400 deg.C and <=700 deg.C, and a molar ratio of a group VI raw material to a group II raw material to be fed to <=6, and using a reduced pressure MOCVD method. After forming the ZnSe layer for the waveguide layer, SiO2 is removed with an HF etchant. An optical waveguide is completed by covering the whole surface of the ZnSe for the waveguide layer with the ZnS for an upper clad layer in accordance with a method for growing ZnS. |
| 公开日期 | 1990-02-15 |
| 申请日期 | 1988-08-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65980]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | YAMAZAKI KOJI. Optical waveguide and its production. JP1990046408A. 1990-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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