Surface emission type semiconductor laser device
文献类型：专利
| 作者 | NITTA ATSUSHI |
| 发表日期 | 1989-11-13 |
| 专利号 | JP1989281783A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emission type semiconductor laser device |
| 英文摘要 | PURPOSE:To avoid the temperature rise of the active region of a laser oscillation structure having a P-N junction and facilitate continuous operation at a room temperature by forming trenches to which the parts of a heat sink can be fitted are formed near the active region. CONSTITUTION:Two rectangular trenches 15 are provided near the active layer 6 of a laser oscillation structure. When the structure is mounted on a ridged heat sink 17 and a current is applied to induce laser operation, heat created in the active layer 6 is effectively discharged from the ridges 21 of the heat sink 17 inserted into the rectangular trenches 15. With this constitution, the temperature rise of the active layer 6 is suppressed, so that room temperature continuous oscillating operation can be realized. Moreover, when the structure is mounted on a package or the like, if ridges which can be fitted to the rectangular trenches 15 are provided on the mounting part of the package, the structure can be always mounted on the same position of the package. |
| 公开日期 | 1989-11-13 |
| 申请日期 | 1988-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65986]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | NITTA ATSUSHI. Surface emission type semiconductor laser device. JP1989281783A. 1989-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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