Bandgap engineering
文献类型：专利
| 作者 | LAM, YEE, LOY; CHAN, YUEN, CHUEN |
| 发表日期 | 2004-11-04 |
| 专利号 | WO2004095662A2 |
| 著作权人 | DENSELIGHT SEMICONDUCTORS PTE LTD |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Bandgap engineering |
| 英文摘要 | A method for achieving large localized bandgap energy differences at the wafer-level scale, with fine bandgap control, through a combination of regrowth and quantum well intermixing processes. The technique allows fabrication of a photonic integrated circuit on a wafer, wherein epitaxial layers of different composition are formed on separate regions to optimise the associated energy bandgap at a different centre wavelength. Quantum well intermixing of those parts of the structure containing quantum wells allows localised fine tuning of the bandgap, either to correct for inaccuracies during deposition or growth, or intentionally to detune the bandgap to achieve a certain functionality such as greater transparency or responsivity. |
| 公开日期 | 2004-11-04 |
| 申请日期 | 2004-04-23 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65990]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | DENSELIGHT SEMICONDUCTORS PTE LTD |
| 推荐引用方式 GB/T 7714 | LAM, YEE, LOY,CHAN, YUEN, CHUEN. Bandgap engineering. WO2004095662A2. 2004-11-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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