Buried hetero-structure semiconductor laser
文献类型：专利
| 作者 | KURODA NAOTAKA |
| 发表日期 | 1990-09-17 |
| 专利号 | JP1990234487A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried hetero-structure semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a leakage current by forming on a semiconductor substrates a cladding layer of a different conductivity type from that of the semiconductor substrate into an inverted trapezoid shape, the cladding layer having specified impurity concentration and height, and further specifying the thickness of a semi-insulating semiconductor layer. CONSTITUTION:A cladding layer 13 of a different conductivity type from that of a semiconductor substrate 10 in a double-hetero junction structure on the semiconductor trapezoid shape with impurity concentration less than 10cm and height less than 2mum, and a semi-insulating semiconductor layer 17 is made 4mum or more in thickness. Herein, a buried hetero-structure semiconductor laser, which is incorporates a semi- insulating semiconductor layer 17 therein as a current blocking layer, has a leakage current substantially flowing through a P cladding layer 13 - the semi-insulating semiconductor layer 17 - an N cladding layer 1 Accordingly, the height of the P cladding layer 15 is made lower with a contact area being reduced. Further, the impurity concentration is made high so as not to permit voltage applied to a PIN structure to be made high, and the thickness of the semi-insulating semiconductor layer 17 is made thick by dipping a mesa up to the active layer 13 and the N cladding layer 1 Hereby, a leakage current is reduced. |
| 公开日期 | 1990-09-17 |
| 申请日期 | 1989-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/65998]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KURODA NAOTAKA. Buried hetero-structure semiconductor laser. JP1990234487A. 1990-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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