Detecting method for pn junction in compound semiconductor
文献类型：专利
| 作者 | UEDA OSAMU; TANAHASHI TOSHIYUKI; USHIJIMA ICHIROU |
| 发表日期 | 1983-04-04 |
| 专利号 | JP1983056350A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Detecting method for pn junction in compound semiconductor |
| 英文摘要 | PURPOSE:To detect the interface of a homo-junction distinctly by coating a part of the semiconductor with Au or the alloy of Au and another with at least one metal. CONSTITUTION:A part of the semiconductor is coated with Au or the alloy of Au and another at least with one metal. The interface of the homo-junction can be detected distinctly by chemically corroding the end surface of the semiconductor by using an alkaline aqueous solution containing alkali ferricyanide. Accordingly, the method remarkably contributes to the detection of the shape of the interface of every kind of junctions, such as a multilayer epitaxial wafer including the homo-junction, a diffused junction, etc. |
| 公开日期 | 1983-04-04 |
| 申请日期 | 1981-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66009]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | UEDA OSAMU,TANAHASHI TOSHIYUKI,USHIJIMA ICHIROU. Detecting method for pn junction in compound semiconductor. JP1983056350A. 1983-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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