Visible ray semiconductor laser device
文献类型：专利
| 作者 | HAMADA HIROYOSHI; HONDA MASAHARU; SHONO MASAYUKI; YAMAGUCHI TAKAO |
| 发表日期 | 1990-10-23 |
| 专利号 | JP1990260682A |
| 著作权人 | SANYO ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible ray semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a visible ray semiconductor laser device with a low oscillation threshold by a method wherein a plane inclined in a [011] orientation by an angle of 5 degrees or more to a (100) plane is provided to the primary face of a GaAs board, and a GaInP buffer layer and an AlGaInP semiconductor layer are laminated. CONSTITUTION:A plane inclined in a [011] orientation by an angle of 5 degrees or more to a (100) plane is provided to the primary face 1a of a GaAs board 1 by polishing. An N-type GaInP buffer layer 2 is laminated on the polished primary face 1a, and an AlGaInP semiconductor layer composed of an N-type clad layer 3, an AlGaInP active layer 4, a P-type clad layer 5, and a cap layer 6 is laminated on the buffer layer 2. By this setup, a visible ray semiconductor device low in oscillation threshold can be obtained. It can be improved in a manufacturing yield. |
| 公开日期 | 1990-10-23 |
| 申请日期 | 1989-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66010]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | HAMADA HIROYOSHI,HONDA MASAHARU,SHONO MASAYUKI,et al. Visible ray semiconductor laser device. JP1990260682A. 1990-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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