Optical electronic element
文献类型：专利
| 作者 | INOUE TAKESHI; HIRATA TAKAAKI |
| 发表日期 | 1988-12-21 |
| 专利号 | JP1988313887A |
| 著作权人 | 光計測技術開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical electronic element |
| 英文摘要 | PURPOSE:To control the confinement width of carriers variably by providing an electric field applying means in which a depletion layer is formed on at least one side section of an active layer and a clad layer. CONSTITUTION:The layer structure of a P-type AlGaAs clad layer 2 shaped onto a P-type GaAs substrate 1, an undoped GaAs active layer 3 and an N-type AlGaAs clad layer 4 is formed, one part of the clad layer 2, the active layer 3 and the clad layer 4 are etched to a mesa type, an electrode 6 for confinement is shaped onto the side section of the mesa type section through an insulating layer 5, and electrodes 7, 8 for drive are formed respectively onto the surface of the clad layer 4 and the rear of the substrate Consequently, when the electrode 6 for confinement is viced, the bands of the side section regions 9 of the active layer 3 and the clad layers 2, 4 are bent. Accordingly, the length of bending regions is determined by applied voltage, thus controlling the confinement width of carriers by applied voltage. |
| 公开日期 | 1988-12-21 |
| 申请日期 | 1987-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66011]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光計測技術開発株式会社 |
| 推荐引用方式 GB/T 7714 | INOUE TAKESHI,HIRATA TAKAAKI. Optical electronic element. JP1988313887A. 1988-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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