Structure of liquid-phase epitaxial grown layer
文献类型：专利
| 作者 | HIRANO RIYOUICHI; NAMISAKI HIROBUMI; SUZAKI WATARU |
| 发表日期 | 1982-12-14 |
| 专利号 | JP1982204120A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure of liquid-phase epitaxial grown layer |
| 英文摘要 | PURPOSE:To flatten the whole surface of the semiconductor of the uppermost layer by alternately forming the first semiconductor layers, the speed of growth thereof in a groove section is faster, and the second semiconductor layers different from the first semiconductor layers successively onto a substrate with the groove. CONSTITUTION:An InP layer 3 is grown onto the InP substrate 1 with the groove 2 in epitaxial form, the InGaAsP layer 4, the speed of growth thereof in the groove section is faster than a flat section, is grown, an InP layer 7 and the InGaAsP layer 8 are grown successively onto the layer 4 in epitaxial form, and the plane of the uppermost layer 8 is flattened. Accordingly, the semiconductor layers with flat surfaces in which slits are not shaped can be grown onto the substrate with the groove. |
| 公开日期 | 1982-12-14 |
| 申请日期 | 1981-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66026]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HIRANO RIYOUICHI,NAMISAKI HIROBUMI,SUZAKI WATARU. Structure of liquid-phase epitaxial grown layer. JP1982204120A. 1982-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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