Semiconductor laser element and modulation method
文献类型：专利
| 作者 | KAYANE NAOKI; UOMI KAZUHISA; OKAI MAKOTO |
| 发表日期 | 1991-02-12 |
| 专利号 | JP1991032081A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and modulation method |
| 英文摘要 | PURPOSE:To enable high speed modulation by covering the periphery of an active layer with an organic insulating film and reducing parasitic capacitance outside the active region and leakage of modulated signals. CONSTITUTION:An active layer 2, a p-type InP clad layer 3, a cap layer 4 are successively grown on a substrate Then, a part including the active region 2 is left as it is and the periphery thereof is removed by etching, and a p-type InP layer 3 is again grown. Further, an organic insulating film 6 is applied, and evaporated to form an electrode metal element. Then the electrode metal in the central part of the element is removed to divide it into electrodes 7, 8 forming current injecting means. Since the periphery of the active layer 2 in this laser element is covered with the film 6, parasitic capacitance outside the active region 2 is reduced. When the current ratio at the electrode 7, 8 of the laser element is held at the predetermined value and a modulated signal is applied to the electrode 7 having low current value, good frequency characteristic can be obtained and high speed modulation is enabled. |
| 公开日期 | 1991-02-12 |
| 申请日期 | 1989-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66037]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAYANE NAOKI,UOMI KAZUHISA,OKAI MAKOTO. Semiconductor laser element and modulation method. JP1991032081A. 1991-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。