Liquid crystal epitaxial growth method of multilayers
文献类型：专利
| 作者 | WAJIMA MINEO; UNNO TSUNEHIRO; KONNO TAIICHIRO |
| 发表日期 | 1986-09-17 |
| 专利号 | JP1986208828A |
| 著作权人 | HITACHI CABLE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid crystal epitaxial growth method of multilayers |
| 英文摘要 | PURPOSE:To obtain a crystal growing layer of the prescribed thickness by adding in advance a crystal seed to a raw material solution. CONSTITUTION:A crystal substrate 11 is held in a substrate holder 15, and raw material solutions 24, 25 of different seeds in which III-V group metals are melted in a saturated state are charged into the first and second raw material solution reservoirs 20, 21, respectively. When crystal seeds 26, 27 are added in advance to the solutions 24, 25, respectively, oversaturated components generated upon falling of the temperature are sequentially precipitated to maintain the solutions 24, 25 in the saturated state immediately before the components are distributed out, and the distributing time of the solutions can be freely selected. accordingly, the oversaturation degrees of the distributing solutions 28, 29 can be freely controlled. |
| 公开日期 | 1986-09-17 |
| 申请日期 | 1985-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66038]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI CABLE |
| 推荐引用方式 GB/T 7714 | WAJIMA MINEO,UNNO TSUNEHIRO,KONNO TAIICHIRO. Liquid crystal epitaxial growth method of multilayers. JP1986208828A. 1986-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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